HPC MSU
Name:James Gafford
Associated Centers:Center for Advanced Vehicular Systems
Position:Research Associate
Email: gafford@cavs.msstate.edu
Office:Center for Advanced Vehicular Systems, 2123-B
Office Phone:(662) 325-5438

Research Interest: Power Electronics
Mobile Power
Wide Bandgap Semiconductors
Electro-Mechanical Energy Conversion

Hobbies:Music - Blues, Jazz
Outdoor Sports - Cycling, Backpacking, Kayaking etc.
Team Sports - baseball/softball, football, basketball etc.
Food - cooking, eating, drinking, thowing, etc.


Publications: Lemmon, A., Mazzola, M., Gafford, J., & Parker, C. (2013). Stability Considerations for Silicon Carbide Field Effect Transistors. IEEE Transactions on Power Electronics Letters. IEEE. 28, 4453-4459. [Document]

Schrader, R. K., Mazzola, M., & Gafford, J. (2013). Diode-Free Synchronous Rectification Using a SiC Trench JFET. PCIM Europe 2013. Nuremberg, Germany: VDE VERLAG GMBH. 333-336. [Document]

Lemmon, A., Mazzola, M., Gafford, J., & Parker, C. (2013). Gate-Drive Considerations for Silicon Carbide FET-Based Half-Bridge Circuits. PCIM Europe 2013. Nuremberg, Germany: VDE VERLAG GMBH. 311-318. [Document]

Gafford, J., Mazzola, M., Lemmon, A., & Parker, C. (2013). Stable High DV/dt Switching of SiC JFETs Using Simple Drive Methods. Proceedings of the Applied Power Electronics Conference 2013. Long Beach, CA: IEEE. 2450-2452. [Document]

Mazzola, M., Schrader, R. K., Lemmon, A., Parker, C., & Gafford, J. (2013). Active Gate Drive Solutions for Improving SiC JFET Switching Dynamics. Proceedings of the Applied Power Electronics Conference 2013. Long Beach, CA: IEEE. 2739-2743. [Document]

Total Publications by this Author: 17