(Invited) Recombination-induced Migration and Reactions of Hydrogen in SiC
Koshka, Y. (2014). (Invited) Recombination-induced Migration and Reactions of Hydrogen in SiC. SPIE NanoScience + Engineering, part of SPIE Optics + Photonics symposium, Conference 9174: Nanoepitaxy: Materials and Devices VI. San Diego, CA.
A phenomenon of recombination-induced athermal migration of hydrogen in SiC and resulting formation of multiple complexes of hydrogen with defects and impurities is investigated as a promising approach to defect-engineering and conductivity modulation in SiC devices and nano-structures. Specifically, selective-area recombination-induced passivation of acceptors in p-type SiC and even inversion of the conductivity type can be achieved by illuminating hydrogenated SiC with above-bandgap light at low temperatures. SiC bipolar device structures are being designed to induce similar defect reactions by electrical-injection. A potential for SiC nanowire-based devices utilizing the recombination-induced migration and defect passivation is investigated.